C3M0045065K |
Part Number | C3M0045065K |
Manufacturer | Cree |
Description | VDS 650 V C3M0045065K Silicon Carbide Power MOSFET TM C3M MOSFET Technology ID @ 25˚C RDS(on) 49 A 45 mΩ N-Channel Enhancement Mode Features Package • C3MTM SiC MOSFET technology • O... |
Features |
Package
• C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • EV chargers • Server & Telecom PSU • UPS • Solar inverters • SMPS • DC/DC c... |
Document |
C3M0045065K Data Sheet
PDF 1.05MB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | C3M0045065J1 |
Wolfspeed |
Silicon Carbide Power MOSFET | |
2 | C3M0045065K |
Wolfspeed |
Silicon Carbide Power MOSFET | |
3 | C3M0045065L |
Wolfspeed |
Silicon Carbide Power MOSFET | |
4 | C3M0040120D |
Wolfspeed |
Silicon Carbide Power MOSFET | |
5 | C3M0040120D |
Cree |
Silicon Carbide Power MOSFET | |
6 | C3M0040120J1 |
Wolfspeed |
Silicon Carbide Power MOSFET |