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HGTP7N60A4D |
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| Part Number | HGTP7N60A4D |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emi... |
| Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331. The diode used in anti−parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49333... |
| Document |
 HGTP7N60A4D Data Sheet
PDF 537.51KB |
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Desde 2024. D4U Semiconductor.
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