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FGY60T120SQDN |
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| Part Number | FGY60T120SQDN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering... |
| Features |
a robust and
cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
• Extremely Efficient Trench with Field Stop Technology • Maximum Junction Temperature TJ = 175°C • Low Saturation Voltage: VCE(sat) = 1.7 V (Typ.) @ IC = 60 A • 100% of the Parts Tested for ILM (Note 1) • Soft Fast Reverse Re... |
| Document |
 FGY60T120SQDN Data Sheet
PDF 554.70KB |
Similar Datasheet
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| 2 | FGY100T120SWD |
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| 3 | FGY100T65SCDT |
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Desde 2024. D4U Semiconductor.
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