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AFGB30T65RQDN |
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| Part Number | AFGB30T65RQDN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | IGBT for Automotive Applications 650 V, 30 A AFGB30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This tech... |
| Features |
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.58 V (Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Tightened Parameter Distribution • This Device is Pb−Free and RoHS Compliant Typical Applications • E−compressor for HEV/EV • PTC Heater for HEV/EV DATA SHEET www.onsemi.com BVCES 650 V VCE(sat) TYP 1.58 V C IC 30 A G E C G E D2PAK 3 LEAD CASE 418AJ MARKING DIAGRAM &Y&Z&3&K AFGB30 T65RQDN &Y = Logo &Z = Assem... |
| Document |
 AFGB30T65RQDN Data Sheet
PDF 241.09KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AFGB30T65SQDN |
ON Semiconductor |
IGBT |
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| 2 | AFGB20N60SFD-BW |
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| 3 | AFGB40T65RQDN |
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| 4 | AFGB40T65SQDN |
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| 5 | AFGHL25T120RHD |
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| 6 | AFGHL25T120RLD |
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IGBT |
|
Desde 2024. D4U Semiconductor.
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