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AFGHL30T65RQDN |
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| Part Number | AFGHL30T65RQDN |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | IGBT for Automotive Application 650 V, 30 A AFGHL30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This tech... |
| Features |
• Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM (Note 2) • High Input Impedance • Fast Switching • Tightened Parameter Distribution • This Device is Pb−Free and RoHS Compliant Typical Applications • E−compressor for HEV/EV, PTC heater for HEV/EV MAXIMUM RATINGS Rating Symbol Value Unit Collector−to−Emitter Voltage Gate−to−Emitter Voltage Transient Gate−to−Emitter Voltage VCES VGES 650 V ±20 V ±30 Collec... |
| Document |
 AFGHL30T65RQDN Data Sheet
PDF 324.20KB |
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Desde 2024. D4U Semiconductor.
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