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3DA76 |
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| Part Number | 3DA76 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE= 15(Max) @IC= 0.3A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an... |
| Features |
ter Saturation Voltage
IC= 0.5A; IB=0.1A
ICBO
Emitter Cutoff current
VCE= 24V; IC=0
IEBO
Emitter Cutoff current
VEB= 4.0V; IC=0
hFE
DC Current Gain
IC=0.3A ; VCE=10V
3DA76
MIN MAX UNIT
65
V
1.5
V
1.0
mA
0.2
mA
15
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized q... |
| Document |
 3DA76 Data Sheet
PDF 249.00KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DA752 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 3DA752 |
TRANSYS Electronics Limited |
TO-251 Plastic-Encapsulated Transistors |
|
| 3 | 3DA77 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 3DA1360 |
LZG |
SILICON PNP TRANSISTOR |
|
| 5 | 3DA1360A |
LZG |
SILICON PNP TRANSISTOR |
|
| 6 | 3DA1569 |
Huajing Microelectronics |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|