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IAUC50N08S5N102 |
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| Part Number | IAUC50N08S5N102 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IAUC50N08S5N102 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • MSL1 up to 260°C peak reflow • 175 °C operatin... |
| Features |
• OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 80 V 10.2 mW 50 A PG-TDSON-8-33 1 1 Type IAUC50N08S5N102 Package Marking PG-TDSON-8-33 5N08102 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Symbol Conditions ID V GS=10 V, Chip limitation1,2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS V GS=10V, DC current T a=85 °C... |
| Document |
 IAUC50N08S5N102 Data Sheet
PDF 1.25MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IAUC50N08S5L096 |
Infineon |
Power Transistor |
|
| 2 | IAUC100N04S6L020 |
Infineon |
Power Transistor |
|
| 3 | IAUC100N04S6L025 |
Infineon |
Power Transistor |
|
| 4 | IAUC100N04S6N015 |
Infineon |
Power Transistor |
|
| 5 | IAUC100N04S6N028 |
Infineon |
Power Transistor |
|
| 6 | IAUC100N08S5N034 |
Infineon |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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