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FQPF8N90C |
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| Part Number | FQPF8N90C |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ... |
| Features |
• 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.15 A • Low Gate Charge (Typ. 35 nC) • Low Crss (Typ. 12 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD TJ, TSTG TL Power Dissipation (TC = 25°C) - Derate above 25°... |
| Document |
 FQPF8N90C Data Sheet
PDF 1.54MB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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