FQA11N90-F109 |
Part Number | FQA11N90-F109 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Description | This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ... |
Features |
• 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp bal... |
Document |
FQA11N90-F109 Data Sheet
PDF 1.49MB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQA11N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
2 | FQA11N90 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | FQA11N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
4 | FQA11N90C-F109 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FQA11N90C_F109 |
Fairchild Semiconductor |
MOSFET | |
6 | FQA11N90_F109 |
Fairchild Semiconductor |
N-Channel QFET MOSFET |