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TSM2NB60CP |
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| Part Number | TSM2NB60CP |
| Manufacturer | Taiwan Semiconductor |
| Description | TSM2NB60CP TSM2NB60CH Taiwan Semiconductor N-Channel Power MOSFET 600V, 2A, 4.4Ω FEATURES ● Advanced planar process ● 100% avalanche tested ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU... |
| Features |
● Advanced planar process ● 100% avalanche tested ● Pb-free plating ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATION ● Power Supply ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 4.4 Ω Qg 9.4 nC TO-251(IPAK) TO-252(DPAK) Notes: MSL 3 (Moisture Sensitivity Level) for TO-252 (D-PAK) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage VDS 600 VGS ±30 Continuous Drain C... |
| Document |
 TSM2NB60CP Data Sheet
PDF 834.54KB |
Similar Datasheet
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|---|---|---|---|---|
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| 2 | TSM2NB60 |
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Desde 2024. D4U Semiconductor.
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