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IRG7S313U |
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| Part Number | IRG7S313U |
| Manufacturer | International Rectifier |
| Description | This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which... |
| Features |
Key Parameters
l Advanced Trench IGBT Technology
VCE min
330
V
l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
1.35
V
circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
IRP max @ TC= 25°C TJ max
160
A
150
°C
l High repetitive peak current capability
l Lead Free package
C
G
E
n-channel
G Gate
E C G
D2Pak IRG7S313UPbF
C Collector
E Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(o... |
| Document |
 IRG7S313U Data Sheet
PDF 272.87KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG7S313UPBF |
International Rectifier |
PDP TRENCH IGBT |
|
| 2 | IRG7S319UPBF |
International Rectifier |
PDP TRENCH IGBT |
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| 3 | IRG7SC12FPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG7SC28UPbF |
International Rectifier |
PDP Trench IGBT |
|
| 5 | IRG71C28U |
International Rectifier |
PDP TRENCH IGBT |
|
| 6 | IRG7I313UPBF |
International Rectifier |
PDP TRENCH IGBT |
|
Desde 2024. D4U Semiconductor.
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