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FDC640P ON Semiconductor P-Channel MOSFET Datasheet

FDC640P P채널 20V 4.5A(Ta) 1.6W(Ta) 표면 실장 SuperSOT™-6


ON Semiconductor
FDC640P
Part Number FDC640P
Manufacturer ON Semiconductor (https://www.onsemi.com/)
Description ...
Features ...

Document Datasheet FDC640P datasheet pdf (325.47KB)
Distributor Distributor
DigiKey
Stock 458 In Stock
Price
1000 units: 419.589 KRW
500 units: 493.01 KRW
100 units: 589.97 KRW
10 units: 852.5 KRW
1 units: 981 KRW
BuyNow BuyNow BuyNow (Manufacturer a onsemi)




FDC640P Distributor

part
onsemi
FDC640P
MOSFET, P CH, -20V, -4.5A, SOT-23-6
500 units: 361 KRW
100 units: 462 KRW
10 units: 663 KRW
5 units: 783 KRW
Distributor
element14 Asia-Pacific

15910 In Stock
BuyNow BuyNow
part
onsemi
FDC640P
P채널 20V 4.5A(Ta) 1.6W(Ta) 표면 실장 SuperSOT™-6
1000 units: 419.589 KRW
500 units: 493.01 KRW
100 units: 589.97 KRW
10 units: 852.5 KRW
1 units: 981 KRW
Distributor
DigiKey

458 In Stock
BuyNow BuyNow
part
onsemi
FDC640P
Trans MOSFET P-CH 20V 4.5A 6-Pin SuperSOT T/R (Alt: FDC640P)
300000 units: 0.15294 USD
150000 units: 0.15663 USD
60000 units: 0.16049 USD
30000 units: 0.16456 USD
18000 units: 0.16667 USD
12000 units: 0.16883 USD
6000 units: 0.17105 USD
Distributor
Avnet Asia

0 In Stock
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part
onsemi
FDC640P
MOSFETs SSOT-6 P-CH -20V
1 units: 0.68 USD
10 units: 0.591 USD
100 units: 0.409 USD
500 units: 0.342 USD
1000 units: 0.291 USD
3000 units: 0.259 USD
6000 units: 0.251 USD
9000 units: 0.237 USD
24000 units: 0.225 USD
Distributor
Mouser Electronics

12361 In Stock
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part
onsemi
FDC640P
Trans MOSFET P-CH 20V 4.5A 6-Pin TSOT-23 T/R
3000 units: 0.2054 USD
Distributor
Arrow Electronics

18000 In Stock
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part
onsemi
FDC640P
Trans MOSFET P-CH 20V 4.5A 6-Pin TSOT-23 T/R
3000 units: 0.2041 USD
Distributor
Verical

18000 In Stock
BuyNow BuyNow
part
onsemi
FDC640P
P-Channel 20 V 0.053 Ohm 2.5V PowerTrench Specified Mosfet SSOT-6
15000 units: 0.22 USD
12000 units: 0.225 USD
9000 units: 0.23 USD
6000 units: 0.23 USD
3000 units: 0.235 USD
Distributor
Future Electronics

0 In Stock
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part
onsemi
FDC640P
FDC640P - P-Channel PowerTrench MOSFET, 2.5V specified, -20V, -4.5A
1000 units: 0.1612 USD
500 units: 0.1706 USD
100 units: 0.1782 USD
25 units: 0.1858 USD
1 units: 0.1896 USD
Distributor
Rochester Electronics

0 In Stock
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part
onsemi
FDC640P
Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
9000 units: 0.143 USD
3000 units: 0.15 USD
1000 units: 0.16 USD
500 units: 0.17 USD
100 units: 0.206 USD
10 units: 0.303 USD
1 units: 0.387 USD
Distributor
TME

0 In Stock
No Longer Stocked
part
onsemi
FDC640P
POWER MOSFET TRANSISTOR
6000 units: 0.16 USD
Distributor
Richardson RFPD

0 In Stock
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FDC640P Similar Datasheet

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These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features • Q1 3.0 A, 20V. RDS(ON) = 70 mΩ @ VGS = 4.5 V RDS(ON) = 95 mΩ @ VGS = 2.5 V • Q2 –2.2 A, 20V. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON). • SuperSOT –6 package: small footprint (72...
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This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical. Features • • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)...
FDC642P
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„ Max rDS(on) = 65 mΩ at VGS = -4.5 V, ID = -4.0 A „ Max rDS(on) = 100 mΩ at VGS = -2.5 V, ID = -3.2 A „ Fast switching speed „ Low gate charge (11nC typical) „ High performance trench technology for extremely low rDS(on) „ SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm thick) „ Termination is Lead-free and RoHS Compliant This P-Channel 2.5V specified MOSFET is produced using ON Semicondcutor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small foot...
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MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extremely Low RDS(on)  SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)  AEC−Q101 Qualified and PPAP Capable  This Device is Pb−Free and is RoHS Compliant Applications  Load Switch  Battery Protection  Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate...
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MOSFET – P-Channel, POWERTRENCH) -20 V, -4 A, 100 mW FDC642P-F085, FDC642P-F085P Features  Typ RDS(on) = 52.5 mW at VGS = −4.5 V, ID = −4 A  Typ RDS(on) = 75.3 mW at VGS = −2.5 V, ID = −3.2 A  Fast Switching Speed  Low Gate Charge (6.9 nC Typical)  High Performance Trench Technology for Extremely Low RDS(on)  SUPERSOTt−6 Package: Small Footprint (72% Smaller than Standard SO−8); Low Profile (1 mm Thick)  AEC−Q101 Qualified and PPAP Capable  This Device is Pb−Free and is RoHS Compliant Applications  Load Switch  Battery Protection  Power management MOSFET MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGS ID Drain to Source Voltage Gate...




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