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FDMS3660S |
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| Part Number | FDMS3660S |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | Asymmetric Dual N-Channel MOSFET |
| Features |
Q1: N−Channel
• Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A • Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N−Channel • Max rDS(on) = 1.8 mW at VGS = 10 V, ID = 30 A • Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 27 A • Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching... |
| Document |
 FDMS3660S Data Sheet
PDF 702.36KB |
Similar Datasheet
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| 1 | FDMS3660AS |
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| 2 | FDMS3660S |
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Desde 2024. D4U Semiconductor.
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