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EPC2012C |
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| Part Number | EPC2012C |
| Manufacturer | EPC |
| Description | eGaN® FET DATASHEET EPC2012C – Enhancement Mode Power Transistor VDS , 200 V RDS (on) , 100 mΩ ID , 5 A D G S EPC2012C EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron... |
| Features |
Power Transfer
Benefits • Ultra High Efficiency • Ultra Low RDS(on) • Ultra Low QG • Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 4.2 RθJB Thermal Resistance, Junction-to-Board 12.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 85 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details. PARAMETER Static Characteristics (TJ = 25°C ... |
| Document |
 EPC2012C Data Sheet
PDF 1.14MB |
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