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CS150N03D8 |
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| Part Number | CS150N03D8 |
| Manufacturer | Huajing |
| Description | CS150N03 D8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The ... |
| Features |
l Fast Switching l Low ON Resistance(Rdson≤2.5mΩ) l Low Gate Charge l Low Reverse transfer capacitances(Typical:482pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID IDMa1 VGS EAS a2
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Derating Factor above 25°C Operating Junction and Storage Tem... |
| Document |
 CS150N03D8 Data Sheet
PDF 405.66KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CS150N03 |
Huajing |
Silicon N-Channel Power MOSFET |
|
| 2 | CS150N03A8 |
Huajing |
Silicon N-Channel Power MOSFET |
|
| 3 | CS150N04A8 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET |
|
| 4 | CS150N95 |
CASS |
N-Channel Trench Power MOSFET |
|
| 5 | CS1501 |
Cirrus Logic |
Digital Power Factor Correction Controller |
|
| 6 | CS1501-7R |
Power-One |
100 Watt DC-DC Converters |
|
Desde 2024. D4U Semiconductor.
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