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RJP63F3 |
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| Part Number | RJP63F3 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High ... |
| Features |
• Trench gate and thin wafer technology (G6H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 100 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) Preliminary Datasheet R07DS0321EJ0200 Rev.2.00 May 26, 2011 C 1 23 Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 1... |
| Document |
 RJP63F3 Data Sheet
PDF 240.41KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | RJP63F3A |
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| 2 | RJP63F3DPP-M0 |
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| 3 | RJP63K2DPK-M0 |
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| 4 | RJP63K2DPP-M0 |
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| 5 | RJP6065DPM |
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| 6 | RJP6085DPK |
Renesas Technology |
Silicon N-Channel IGBT |
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Desde 2024. D4U Semiconductor.
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