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5HB06N8 |
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| Part Number | 5HB06N8 |
| Manufacturer | maspower |
| Description | This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. Features • 2 x N + 2 x P channels in a SOIC package • Low voltage (VGS = 4.5 V) gate drive ... |
| Features |
low on-resistance achievable with low gate drive.
Features
• 2 x N + 2 x P channels in a SOIC package • Low voltage (VGS = 4.5 V) gate drive Applications • DC Motor control • DC-AC Inverters Ordering information Device 5HB06N8 Device marking WFS 5HB06N8 Reel size (inches) 13 Tape width Quantity (mm) per reel 12 2,500 www.maspowersemi.com 1 5HB06N8 H-BRIDGE-MOS 60V HBRIDGE-DRIVE-2NP-Channel Advanced Power MOSFET Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C (b) @ VGS= 10V; TA=70°C (b) @ VGS= 10V; TA=25°C (a) ... |
| Document |
 5HB06N8 Data Sheet
PDF 1.99MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 5HB03N8 |
Winsemi |
30V SO8 Complementary enhancementmode MOSFET H-Bridge |
|
| 2 | 5H0165R |
Fairchild Semiconductor |
KA5H0165R |
|
| 3 | 5H02659 |
Fairchild Semiconductor |
KA5H02659 |
|
| 4 | 5H02659R |
ON Semiconductor |
Power Switch |
|
| 5 | 5H02659RN |
Fairchild Semiconductor |
Power Switch |
|
| 6 | 5H0265RC |
Fairchild Semiconductor |
Power Switch |
|
Desde 2024. D4U Semiconductor.
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