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MSG20T120FQC |
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| Part Number | MSG20T120FQC |
| Manufacturer | maspower |
| Description | Features Low Gate charge FS Technology VCE(sat) = 1.7V @ IC = 20A High Input Impedance Short circuit withstand time 10 µs MSG20T120FQC N-Channel IGBT Applications PFC UPS Inverter A... |
| Features |
Low Gate charge FS Technology VCE(sat) = 1.7V @ IC = 20A High Input Impedance Short circuit withstand time 10 µs MSG20T120FQC N-Channel IGBT Applications PFC UPS Inverter Absolute Maximum Ratings Parameter Collector-emitter voltage Gate-emitter voltage Collector curre TC=25°C TC=100°C Pulsed collector current, pulse time limited by Tjmax Diode forward current @ TC = 100°C Diode pulsed current, Pulse time limited by Tjmax Power dissipati TC=25°C TC=100°C Operating Junction and storage temperature rang Symbol Value Unit VCES VGES 1200 V ±30 40 IC 20 ICM 60 A ... |
| Document |
 MSG20T120FQC Data Sheet
PDF 3.01MB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MSG20T65FQC |
maspower |
MOSFET |
|
| 2 | MSG20T65FQS |
maspower |
MOSFET |
|
| 3 | MSG20T65FQT |
maspower |
MOSFET |
|
| 4 | MSG25T120FQC |
maspower |
MOSFET |
|
| 5 | MSG061P03G |
CITC |
P-Channel Enhancement Mode MOSFET |
|
| 6 | MSG100G41 |
ETC |
MSG100x41 |
|
Desde 2024. D4U Semiconductor.
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