MSG40T120FH |
Part Number | MSG40T120FH |
Manufacturer | maspower |
Description | This IGBT is produced using advanced trench fieldstop IGBT technology, which provides low V CE(sat), high switching performance and excellent quality. Applications ▄ Welding TO-247 Features ▄ High Sp... |
Features |
▄ High Speed Switching ▄ Positive Temperature coefficient for easy paralleling ▄ High ruggedness&good thermal stability ▄ Including fast free-wheeling diode
▄ Very tight parameter distribution
GC E
Absolute Maximum Ratings
Characteristics
Symbol
Collector-emitter voltage
V CE
Gate-emitter voltage
V GE
Collector current
T C=25℃ T C=100℃ I C
Pulsed collector current, t p limited by T jmax
I CM
Diode forward current @T C=100℃
IF
Diode pulsed collector current, t p limited by T jmax
I FM
Rating
1200 ±20
80 40 120
40 120
Unit
V V
A
A A A
Short circuit withstand time V GE=15V, V C... |
Document |
MSG40T120FH Data Sheet
PDF 3.01MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MSG40T65FH |
maspower |
IGBT | |
2 | MSG43001 |
Panasonic Semiconductor |
Transistor | |
3 | MSG43004 |
Panasonic Semiconductor |
Transistor | |
4 | MSG061P03G |
CITC |
P-Channel Enhancement Mode MOSFET | |
5 | MSG100G41 |
ETC |
MSG100x41 | |
6 | MSG100J41 |
ETC |
MSG100x41 |