TF12N65 |
Part Number | TF12N65 |
Manufacturer | Alpha & Omega Semiconductors |
Description | Product Summary The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB12N65L have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robust... |
Features |
ain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC=25°C TC=100°C
ID
12 7.7
Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
IDM IAR EAR EAS
dv/dt
TC=25°C Power Dissipation B Derate above 25oC
PD
278 2.2
Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics
TJ, TSTG TL
Parameter Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol RqJA RqCS
AOT(B)12N65(L) ... |
Document |
TF12N65 Data Sheet
PDF 435.99KB |
Similar Datasheet
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