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TTD1415B |
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| Part Number | TTD1415B |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications • High-Power Switching • Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC =... |
| Features |
(1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B
3. Packaging and Internal Circuit
TO-220SIS
1. Base 2. Collector 3. Emitter
©2015 Toshiba Corporation
1
Start of commercial production
2012-09
2015-08-06 Rev.3.0
TTD1415B
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) B... |
| Document |
 TTD1415B Data Sheet
PDF 181.73KB |
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