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3DD5E |
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| Part Number | 3DD5E |
| Manufacturer | Inchange |
| Description | ·Excellent safe operating area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose... |
| Features |
0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 3mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.15A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.15A
ICBO
Collector Cutoff Current
VCB= 350V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.5A; VCE= 10V
3DD5E
MIN TYP. MAX UNIT
250
V
5
V
350
V
1
V
1
V
0.1 mA
0.1 mA
15
180
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inf... |
| Document |
 3DD5E Data Sheet
PDF 230.18KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD5011 |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 2 | 3DD5011A9 |
Huajing Microelectronics |
Silicon NPN Bipolar Transistor |
|
| 3 | 3DD5011AH |
Huajing Microelectronics |
Silicon NPN Bipolar Transistor |
|
| 4 | 3DD5017 |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 5 | 3DD5017 |
Huajing Microelectronics |
Low-frequency amplification shell rated bipolar transistors |
|
| 6 | 3DD5017P |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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