Busque con el número de pieza junto con el fabricante o la descripción
B817C |
Click to view a larger image
| Part Number | B817C |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Features • Large current capacitance • Wide SOA and high durability against breakdown •... |
| Features |
• Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Conditions Ratings Unit -160 V -140 V --6 V --12 A --20 A 2.5 W 120 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are... |
| Document |
 B817C Data Sheet
PDF 168.34KB |
Desde 2024. D4U Semiconductor.
|