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LSH04N65 |
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| Part Number | LSH04N65 |
| Manufacturer | Lonten |
| Description | LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superio... |
| Features |
Ultra low RDS(on) Ultra low gate charge (typ. Qg = 13nC) 100% UIS tested RoHS compliant TO-251 TO-252 TO-220 D TO-220F Applications Power faction correction (PFC). Switched mode power supplies (SMPS). Uninterruptible power supply (UPS). G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 3) Avalanche current, repetitive 3) Power Dissipation ( TC = 25°C ) - Derate above 25°C O... |
| Document |
 LSH04N65 Data Sheet
PDF 853.30KB |
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Desde 2024. D4U Semiconductor.
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