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2SC5609G |
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| Part Number | 2SC5609G |
| Manufacturer | Panasonic |
| Description | Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G Features Package Hi... |
| Features |
Package High forward current transfer ratio hFE Code SSSMini3-F2 Absolute Maximum Ratings Ta = 25°C Pin Name Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V / Collector-emitter voltage (Base open) VCEO 50 V 1. Base 2. Emitter 3. Collector e Emitter-base voltage (Collector open) pe) Collector current nc d ge. ed ty Peak collector current sta tinu Collector power dissipation a e cycle iscon Junction temperature life d, d Storage temperature VEBO 7 V IC 100 mA ICP 200 mA PC 100 mW Tj 125 °C Tstg –55 to +125 °C Marking Sy... |
| Document |
 2SC5609G Data Sheet
PDF 466.79KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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