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R6009JNX ROHM Power MOSFET Datasheet

R6009JNXC7G MOSFETs R6009JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.


ROHM
R6009JNX
Part Number R6009JNX
Manufacturer ROHM (https://www.rohm.com/)
Description R6009JNX   Nch 600V 9A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.585Ω   ID ±9A   PD 53W            lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS comp...
Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6009JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±9 A Pulsed drain current IDP*2 ±27 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse I...

Document Datasheet R6009JNX datasheet pdf (2.08MB)
Distributor Distributor
Mouser Electronics
Stock 1993 In Stock
Price
1 units: 1.53 USD
50 units: 1.48 USD
BuyNow BuyNow BuyNow (Manufacturer a ROHM Semiconductor)




R6009JNX Distributor

part
ROHM Semiconductor
R6009JNXC7G
MOSFET, N-CH, 9A, 600V, TO-220FM
1000 units: 1997 KRW
500 units: 2015 KRW
100 units: 2033 KRW
10 units: 2051 KRW
1 units: 2766 KRW
Distributor
element14 Asia-Pacific

6 In Stock
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part
ROHM Semiconductor
R6009JNXC7G
N채널 600V 9A(Tc) 53W(Tc) 스루홀 TO-220FM
500 units: 932.39 KRW
100 units: 1032.67 KRW
50 units: 1255.24 KRW
1 units: 1558 KRW
Distributor
DigiKey

1899 In Stock
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part
ROHM Semiconductor
R6009JNXC7G
MOSFETs R6009JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.
1 units: 1.53 USD
50 units: 1.48 USD
Distributor
Mouser Electronics

1993 In Stock
BuyNow BuyNow
part
ROHM Semiconductor
R6009JNXC7G
Nch 600V 9A Power MOSFET, PK
50 units: 11.356 HKD
5 units: 12.028 HKD
Distributor
RS

55 In Stock
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part
ROHM Semiconductor
R6009JNXC7G
MOSFET
1 units: 0.89 USD
10 units: 0.761 USD
50 units: 0.737 USD
100 units: 0.679 USD
200 units: 0.66 USD
500 units: 0.658 USD
1000 units: 0.625 USD
Distributor
Chip1Stop

1585 In Stock
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part
ROHM Semiconductor
R6009JNXC7G
Trans MOSFET N-CH 600V 9A 3-Pin(3+Tab) TO-220FM Tube
1000 units: 0.7813 USD
500 units: 0.8225 USD
200 units: 0.825 USD
100 units: 0.8488 USD
50 units: 0.9213 USD
33 units: 0.9513 USD
Distributor
Verical

1585 In Stock
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part
ROHM Semiconductor
R6009JNXC7G
Transistors FETs, MOSFETs Single
1 units: 1.2499 USD
10 units: 1.2018 USD
50 units: 1.1668 USD
100 units: 1.144 USD
Distributor
Ameya Holding Limited

50 In Stock
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part
ROHM Semiconductor
R6009JNXC7G
Transistor MOSFET N-CH 600V 9A 3-Pin TO-220FM Tube - Rail/Tube (Alt: R6009JNXC7G)
100000 units: 1.5821 USD
10000 units: 1.61861 USD
8000 units: 1.65512 USD
6000 units: 1.69163 USD
4000 units: 1.72814 USD
2000 units: 1.76465 USD
1000 units: 1.80116 USD
Distributor
Avnet Americas

0 In Stock
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part
ROHM Semiconductor
R6009JNXC7G
Transistor MOSFET N-CH 600V 9A 3-Pin TO-220FM Tube (Alt: R6009JNXC7G)
No price available
Distributor
Avnet Silica

0 In Stock
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part
ROHM Semiconductor
R6009JNXC7G
RoHS(Ship within 1day) - D/C
1000 units: 0.636 USD
500 units: 0.637 USD
100 units: 0.64 USD
50 units: 0.652 USD
10 units: 0.665 USD
1 units: 0.684 USD
Distributor
CoreStaff Co Ltd

35 In Stock
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R6009JNX Similar Datasheet

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R6009JND3   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6009JND3 Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±9 A Pulsed drain current IDP*2 ±27 A Gate - Source voltage VGSS ±30 V ...
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 125 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spe...
R6009JNJ
manufacturer
ROHM
Power MOSFET
R6009JNJ   Nch 600V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.585Ω ±9A 125W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6009JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±9 A Pulsed drain current IDP*2 ±27 A Gate - Source voltage VGSS ±30 ...
R6009JNX
manufacturer
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·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 9 A IDM Drain Current-Single Pluse 27 A PD Total Dissipation @TC=25℃ 53 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.37 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci...




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