APT6030BVR |
Part Number | APT6030BVR |
Manufacturer | INCHANGE |
Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Sourc... |
Features |
·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Pluse 84 A PD Total Dissipation @TC=25℃ 298 W TJ Max... |
Document |
APT6030BVR Data Sheet
PDF 371.48KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | APT6030BVFR |
INCHANGE |
N-Channel MOSFET | |
2 | APT6030BVFR |
Advanced Power Technology |
Power MOSFET | |
3 | APT6030BVR |
Advanced Power Technology |
Power MOSFET | |
4 | APT6030BN |
Advanced Power Technology |
N-Channel MOSFET | |
5 | APT6030SVR |
Advanced Power Technology |
Power MOSFET | |
6 | APT6032AVR |
Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |