3DD401 |
Part Number | 3DD401 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifi... |
Features |
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.4A ; VCE= 10V
3DD401
MIN TYP. MAX UNIT
150
V
200
V
5
V
1
V
1.5
V
50 μA
10 μA
40
240
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for... |
Document |
3DD401 Data Sheet
PDF 217.40KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 3DD4013A1D |
Huajing Microelectronics |
Silicon NPN Transistor | |
2 | 3DD4013A6D |
Huajing Microelectronics |
Silicon NPN Transistor | |
3 | 3DD4013B1D |
Huajing Microelectronics |
Silicon NPN Transistor | |
4 | 3DD4018A1D |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
5 | 3DD4030A3 |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
6 | 3DD4040A3-H |
Huajing Microelectronics |
Silicon NPN bipolar transistor |