3DD401 INCHANGE Silicon NPN Power Transistor Datasheet. existencias, precio

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3DD401

INCHANGE
3DD401
3DD401 3DD401
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Part Number 3DD401
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifi...
Features V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 100V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 0.4A ; VCE= 10V 3DD401 MIN TYP. MAX UNIT 150 V 200 V 5 V 1 V 1.5 V 50 μA 10 μA 40 240 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for...

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