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G50N60F |
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| Part Number | G50N60F |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | NGTG50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offeri... |
| Features |
a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
• Optimized for Very Low VCEsat • Low Switching Loss Reduces System Power Dissipation • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptible Power Supples (UPS) • Motor Drives ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 100 50 Pulsed collect... |
| Document |
 G50N60F Data Sheet
PDF 243.27KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G50N60HS |
Infineon |
High Speed IGBT |
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| 2 | G5001 |
Global Mixed-mode Technology |
300kHz DC-DC Step-Down PWM Controller |
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| 3 | G5010 |
Global Mixed-mode Technology |
Dual-Low On-Resistance Load Switch |
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| 4 | G5016 |
Global Mixed-mode Technology |
Dual Ultra-Low On-Resistance Load Switch |
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| 5 | G5017 |
Global Mixed-mode Technology |
low ON resistance (Ron) load switches |
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| 6 | G501DS |
Jingdao |
GLASS PASSIVATED RECTIFIERS |
|
Desde 2024. D4U Semiconductor.
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