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30J126 |
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| Part Number | 30J126 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode... |
| Features |
ting conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance
Symbol Rth (j-c)
Max
Unit
1.39
°C/W
Marking
TOSHIBA
GT30J126
Part No. (or abbreviation code) Lot No.
A line indicates Lead (Pb)-Free
1
2008-07-29
Free Datasheet http... |
| Document |
 30J126 Data Sheet
PDF 208.62KB |
Desde 2024. D4U Semiconductor.
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