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IRFB17N50L |
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| Part Number | IRFB17N50L |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor IRFB17N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum... |
| Features |
·Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 16 A IDM Drain Current-Single Pulsed 64 A PD Total Dissipation @TC=25℃ 220 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -... |
| Document |
 IRFB17N50L Data Sheet
PDF 279.63KB |
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Desde 2024. D4U Semiconductor.
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