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TK31N60X |
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| Part Number | TK31N60X |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor TK31N60X ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=1.5mA) ·100% avalanche tested ·Minimum Lot-to... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.088Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=1.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 30.8 A IDM Drain Current-Single Pulsed 123 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150... |
| Document |
 TK31N60X Data Sheet
PDF 383.58KB |
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Desde 2024. D4U Semiconductor.
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