Busque con el número de pieza junto con el fabricante o la descripción
TK12J60U |
Click to view a larger image
| Part Number | TK12J60U |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor TK12J60U ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.4Ω. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot... |
| Features |
·Low drain-source on-resistance: RDS(on) ≤0.4Ω. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pulsed 24 A PD Total Dissipation @TC=25℃ 144 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THER... |
| Document |
 TK12J60U Data Sheet
PDF 264.69KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TK12J60U |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | TK12J60W |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 3 | TK12J60W |
INCHANGE |
N-Channel MOSFET |
|
| 4 | TK12J55D |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 5 | TK12J55D |
INCHANGE |
N-Channel MOSFET |
|
| 6 | TK12 |
Dynex Semiconductor |
Phase Control Thyristor |
|
Desde 2024. D4U Semiconductor.
|