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STW45N65M5 |
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| Part Number | STW45N65M5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 78mΩ(Max) ·100% avalanche tested ·Mini... |
| Features |
·Drain Current –ID= 35A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 78mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 35 A IDM Drain Current-Single Pluse 140 A PD Total Dissipation @TC=25℃ 210 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storag... |
| Document |
 STW45N65M5 Data Sheet
PDF 387.42KB |
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Desde 2024. D4U Semiconductor.
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