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STW18N65M5 |
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| Part Number | STW18N65M5 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati... |
| Features |
·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 15 9.4 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation 110 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(... |
| Document |
 STW18N65M5 Data Sheet
PDF 324.82KB |
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Desde 2024. D4U Semiconductor.
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