STU11N65M5 |
Part Number | STU11N65M5 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-... |
Features |
·With TO-251(IPAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ Tc=100℃ 9 5.6 A IDM Drain Current-Single Pulsed 36 A PD Total Dissipation 85 W Tj Operating Junction Temperature -55~150 ℃ Tstg St... |
Document |
STU11N65M5 Data Sheet
PDF 265.50KB |
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