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STU10NM60N |
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| Part Number | STU10NM60N |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor STU10NM60N ·FEATURES ·With TO-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variation... |
| Features |
·With TO-251(IPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 10 5 A IDM Drain Current-Single Pulsed 32 A PD Total Dissipation @TC=25℃ 70 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·... |
| Document |
 STU10NM60N Data Sheet
PDF 241.88KB |
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Desde 2024. D4U Semiconductor.
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