STP34NM60N |
Part Number | STP34NM60N |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor STP34NM60N FEATURES ·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanch... |
Features |
·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±25 V 31.5 A 126 A ... |
Document |
STP34NM60N Data Sheet
PDF 271.10KB |
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