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STP34N65M5 |
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| Part Number | STP34N65M5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor STP34N65M5 FEATURES ·Drain Current –ID=28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) ·100% avalanche ... |
| Features |
·Drain Current –ID=28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 110mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 650 V ±25 V 28 A 112 A 190 ... |
| Document |
 STP34N65M5 Data Sheet
PDF 271.62KB |
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Desde 2024. D4U Semiconductor.
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