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STP9NM60N |
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| Part Number | STP9NM60N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor STP9NM60N FEATURES ·Drain Current –ID= 6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.745Ω(Max) ·100% avalanch... |
| Features |
·Drain Current –ID= 6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.745Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 6.5 A IDM Drain Current-Single Pluse 26 A PD Total Dissipation @TC=25℃ 70 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Stora... |
| Document |
 STP9NM60N Data Sheet
PDF 271.33KB |
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