STI150N10F7 |
Part Number | STI150N10F7 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262(I2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-... |
Features |
·With TO-262(I2PAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous; 110 A IDM Drain Current-Single Pulsed 440 A PD Total Dissipation 250 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperat... |
Document |
STI150N10F7 Data Sheet
PDF 290.18KB |
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