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STI22NM60N |
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| Part Number | STI22NM60N |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re... |
| Features |
·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 16 10 A IDM Drain Current-Single Pulsed 64 A PD Total Dissipation 125 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL ... |
| Document |
 STI22NM60N Data Sheet
PDF 289.46KB |
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Desde 2024. D4U Semiconductor.
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