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STI16N65M5 |
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| Part Number | STI16N65M5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
| Features |
·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 12 A IDM Pulse Drain Current 48 A Ptot Total Dissipation@TC=25℃ 90 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHAR... |
| Document |
 STI16N65M5 Data Sheet
PDF 293.16KB |
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Desde 2024. D4U Semiconductor.
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