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STD11NM65N |
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| Part Number | STD11NM65N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.455Ω(Max) ·100% avalanche tested ·Mi... |
| Features |
·Drain Current –ID= 44A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.455Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 44 A PD Total Dissipation @TC=25℃ 110 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Sto... |
| Document |
 STD11NM65N Data Sheet
PDF 274.46KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STD11NM65N |
STMicroelectronics |
N-channel MOSFET |
|
| 2 | STD11NM60N |
ST Microelectronics |
N-channel Power MOSFET |
|
| 3 | STD11NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 4 | STD11NM60N-1 |
ST Microelectronics |
N-channel MOSFET |
|
| 5 | STD11NM60N-1 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | STD11NM60ND |
STMicroelectronics |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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