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STB20NM60D |
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| Part Number | STB20NM60D |
| Manufacturer | INCHANGE |
| Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Cu... |
| Features |
·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature ... |
| Document |
 STB20NM60D Data Sheet
PDF 264.85KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | STB20NM60 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | STB20NM60 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 3 | STB20NM60-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | STB20NM60-1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | STB20NM60A-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |
|
| 6 | STB20NM60D |
STMicroelectronics |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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