STB20NM50 |
Part Number | STB20NM50 |
Manufacturer | INCHANGE |
Description | isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robus... |
Features |
·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 20 A IDM Pulse Drain Current 80 A Ptot Total Dissipation@TC=25℃ 192 W Tj Max. Operating Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ ·THERMAL C... |
Document |
STB20NM50 Data Sheet
PDF 248.03KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STB20NM50 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB20NM50-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
3 | STB20NM50-1 |
INCHANGE |
N-Channel MOSFET | |
4 | STB20NM50FD |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB20NM50FD |
INCHANGE |
N-Channel MOSFET | |
6 | STB20NM50FD-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |