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BAS70-04 |
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| Part Number | BAS70-04 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits. K A A1 A2 BAS70-05 SOT-23 (Plastic) K1 K2 BAS70-06 ABSOLUTE RATINGS (l... |
| Features |
R 18 / BAS70-04 06
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
VBR
Tj = 25°C IR = 10µA
VF *
Tj = 25°C IF = 1mA
IR **
Tj = 25°C VR = 50V
Pulse test: * tp = 380µs, δ < 2% ** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
C
Tj = 25°C VR = 0V F = 1MHz
τ*
Tj = 25°C IF = 5mA Krakauer Method
* Effective carrier life time.
Min.
70
Typ.
Max.
410 200
Unit
V mV nA
Min.
Typ.
Max.
2 100
Unit
pF ps
Fig. 1-1: Forward voltage drop versus forward current (low level).
IFM(A)
2.0E-2 1.8E-2 1.6E-2 1.4E-2 1.2E-2 1.0E-2 8.0E-3 6.0E-3 4.0E-3... |
| Document |
 BAS70-04 Data Sheet
PDF 223.04KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS70-00 |
Vishay |
Small Signal Schottky Diodes |
|
| 2 | BAS70-00-G |
Vishay |
Small Signal Schottky Diode |
|
| 3 | BAS70-00-V |
Vishay Siliconix |
Small Signal Schottky Diodes |
|
| 4 | BAS70-02L |
Infineon |
Silicon Schottky Diode |
|
| 5 | BAS70-02V |
Infineon |
Silicon Schottky Diode |
|
| 6 | BAS70-02V-V-G |
Vishay |
Small Signal Schottky Diode |
|
Desde 2024. D4U Semiconductor.
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