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SPA11N65C3 |
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| Part Number | SPA11N65C3 |
| Manufacturer | INCHANGE |
| Description | INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) ·100% avalanch... |
| Features |
·With TO-220F Package ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 11 7 A IDM Drain Current-Single Pulsed 33 A PD Total Dissipation @TC=25℃ 33 W Tj Max. Operating Junction Temperature -55~1... |
| Document |
 SPA11N65C3 Data Sheet
PDF 221.34KB |
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Desde 2024. D4U Semiconductor.
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