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3DD164F |
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| Part Number | 3DD164F |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
g Voltage IC= 5mA; IE= 0
BVCEO Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 5mA; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
ICEO
Collector Cutoff Current
VCE=100V; IE= 0
hFE
DC Current Gain
IC= 5A; VCE= 5V
3DD164F
MIN MAX UNIT
400
V
300
V
5
V
1.5
V
1.8
V
2
mA
15
120
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl... |
| Document |
 3DD164F Data Sheet
PDF 227.86KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD164 |
ETC |
Low-power silicon NPN transistor |
|
| 2 | 3DD164 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 3 | 3DD166 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 4 | 3DD167 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 5 | 3DD167A |
INCHANGE |
NPN Transistor |
|
| 6 | 3DD167B |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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