2SC4574 |
Part Number | 2SC4574 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1.5A, VCE= 3V ·Minimum Lot-... |
Features |
nless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE -1
DC Current Gain
IC= 1.5A ; VCE= 3V
2SC4574
MIN TYP. MAX UNIT
50
V
1.5
V
2.0
V
100 μA
3.0
mA
2000
15000
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co... |
Document |
2SC4574 Data Sheet
PDF 204.38KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC4570 |
NEC |
NPN TRANSISTOR | |
2 | 2SC4570 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
3 | 2SC4571 |
NEC |
NPN TRANSISTOR | |
4 | 2SC4571 |
Inchange Semiconductor |
Silicon NPN RF Transistor | |
5 | 2SC4572 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC4573 |
INCHANGE |
NPN Transistor |